Speaker: Dennis Huang, Harvard University
Time: January 7, 2016, 2:00 - 3:00
The potential of interface engineering to generate novel electronic properties is exemplified in a monolayer of FeSe grown on SrTiO3, which exhibits an order-of-magnitude increase in its superconducting transition temperature (Tc up to 110 K) compared to bulk (Tc = 9 K). Since this discovery in 2012, efforts to reproduce, understand, and extend this finding continue to draw both excitement and scrutiny. We use a combined molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM) system to grow and image films of monolayer FeSe/SrTiO3. By imaging quasiparticle interference (QPI) patterns generated by native defects, we can reconstruct the electronic structure of the unperturbed system. In this talk, we present QPI measurements of band structure and orbital texture as pieces of the puzzle of high-Tc superconductivity in a monolayer of FeSe.