Speaker: Jianfeng Ge (Shanghai Jiao Tong University)
Time: March 7, 2016, 2:00 - 3:00
Superconductivity with critical temperature above boiling point of nitrogen or even room temperature has been a pursuing goal of researchers ever since its discovery, because of its potential application in future electronic devices. Interface effects were found to induce superconductivity between insulating oxides, as well to enhance critical temperature of superconducting films, which matches the technology of device manufacturing perfectly. Recent studies on the superconducting energy gap predict a critical temperature over 80 K in single-layer FeSe films grown on strontium titanate (STO) substrates. In this talk, we developed an in-situ four-point probe electrical transport measurement in a scanning tunnelling microscope (STM). Single-layer FeSe films were grown on STO substrates by molecular beam epitaxy (MBE), and their crystal structure, growth mode and local electronic density of states were investigated by RHEED and STM. Additionally, we measured electrical transport properties in situ for the first time by the four-point probe technique, and demonstrate the critical temperature above 100 K.