Joseph Salfi

Assistant Professor

Department of Electrical and Computer Engineering

Current Projects

  • Physical implementation of quantum computers using spin qubits
  • Quantum simulation using spin qubits

Selected Publications

  • T. Kobayashi, J. Salfi, J. van der Heijden, C. Chua, M.G. House, D. Culcer, W.D. Hutchison, B.C. Johnson, J.C. McCallum, H. Riemann, N.V. Abrosimov, P. Becker, H.-J. Pohl, M.Y. Simmons, S. Rogge. Engineering long spin coherence times of spin-orbit qubits in silicon. Nat. Mater. (2020). DOI: 10.1038/s41563-020-0743-3
  • J. Salfi, J. A. Mol, D. Culcer, S. Rogge. Charge-insensitive single-atom spin-orbit qubit in silicon. Phys. Rev. Lett., 116, 246801 (2016). DOI: 10.1103/PhysRevLett.116.246801
  • J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg, S. Rogge. Quantum simulation of the Hubbard model with dopant atoms in silicon. Nat. Commun., 7, 11342 (2016). DOI: 10.1038/ncomms11342
  • J. Salfi, J.A. Mol, R. Rahman, G. Klimeck, M.Y. Simmons, L.C.L. Hollenberg, S. Rogge. Spatially resolving valley quantum interference of a donor in silicon. 2014. Nat. Mater. 14 (6), 605 (2014). DOI: 10.1038/nmat3941
  • J. Salfi, I.G. Savelyev, M. Blumin, S.V. Nair, H.E. Ruda. Direct observation of single-charge-detection capability of nanowire field-effect transistors. Nature Nanotechology, 5 (10), 737 (2010). DOI: 10.1038/nnano.2010.180.